Characterization of poly-silicon emitter BJTs as access devices for phase change memory

We demonstrate poly-Silicon emitter vertical PNP Bipolar Junction Transistors (BJTs) that could be used as access devices for Phase Change Memory. The device arrays fabricated using a 180nm BiCMOS process exhibit current drive capability in excess of 10mA/μm2, On-Off ratio greater than six orders of magnitude and excellent cross-talk immunity. Our process integration scheme could be extended to enable a high-density Phase Change Memory technology. ©2009 IEEE.