William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
A field effect transistor device (FET), consisting of a nonlinear Mott Insulator channel material, and a high dielectric-constant gate oxide, is explored as a nanoscale device. Experimental functionality of a large scale prototype (5 μm channel length) has been demonstrated. The underlying physics of the device is analyzed and modeled using a time-dependent Hartree approach. Timing estimates suggest a relatively short switching time.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
Revanth Kodoru, Atanu Saha, et al.
arXiv
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering