Pouya Hashemi, Takashi Ando, et al.
VLSI-TSA 2017
The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs. © 2008 IEEE.
Pouya Hashemi, Takashi Ando, et al.
VLSI-TSA 2017
Stephen W. Bedell, S. Hart, et al.
PRiME 2020
Conal E. Murray, Stephen W. Bedell, et al.
Journal of Applied Physics
R. Muthinti, Nicolas Loubet, et al.
SPIE Advanced Lithography 2016