Conference paper
Are Si/SiGe tunneling field-effect transistors a good idea?
Steven J. Koester, Isaac Lauer, et al.
ECS Transactions
The hole transport characteristics in partially strained (0.5%) Ge p-channel MOSFETs formed on silicon-germanium-on-insulator (SGOI) substrates were investigated for gate lengths down to 65 nm. We demonstrate that high hole mobility is maintained down to the shortest channel lengths. The channel conductance from these devices is measured and compared to state-of-the-art high-performance Si channel P-MOSFETs. © 2008 IEEE.
Steven J. Koester, Isaac Lauer, et al.
ECS Transactions
Davood Shahrjerdi, Stephen W. Bedell, et al.
Applied Physics Letters
Jeehwan Kim, Stephen W. Bedell, et al.
Electrochemical and Solid-State Letters
Amlan Majumdar, Sarunya Bangsaruntip, et al.
IEDM 2012