PaperOn the interpretation of ballistic injection velocity in deeply scaled MOSFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
PaperComprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wellsGeorge Zerveas, E. Caruso, et al.Solid-State Electronics
Conference paperAnalysis of Si, InAs, and Si-InAs tunnel diodes and tunnel FETs using different transport modelsAndreas Schenk, Reto Rhyner, et al.SISPAD 2011
PaperTemperature dependence of the transconductance in ballistic III-V QWFETsYang Liu, Mathieu Luisier, et al.IEEE T-ED
