T.P. Smith III, K.Y. Lee, et al.
Physical Review B
The GaAs-GaAlAs graded-index separate confinement heterostructure was grown selectively by molecular beam epitaxy on a SiO2-masked GaAs (100) substrate. The stripe windows on the SiO2 mask were 10 μm in width and were oriented along [011̄] direction. The laser diodes thus fabricated lased in a single longitudinal mode with a side mode suppression ratio of 95:1. Both the longitudinal mode and the single-lobe far-field pattern were stable up to 4Ith.
T.P. Smith III, K.Y. Lee, et al.
Physical Review B
M. Kohl, M.R. Freeman, et al.
Physical Review B
M.R. Freeman, D.D. Awschalom, et al.
QELS 1989
W. Chen, M. Fritze, et al.
Physical Review B