Publication
IEDM 2019
Conference paper

Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory Applications

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Abstract

In this work, we investigate the statistical evolution from nano-conducting path generation to the switching-filament formation in ReRAM devices. We demonstrate the Gumbel statistics, a maxima-value distribution for switching-filament conductance as opposed to the minima-value Weibull model. In contrast to Poisson distribution for nano-path generation, we show the underlying spatial statistics is controlled by a binomial distribution as a result of filament-formation. The reorganization and conglomeration of interacting nano-paths or individual vacancies eventually leads to area-dependent single-filament formation, consistent with the Gumbel statistics. Our methodology provides the foundation for RRAM scaling as well as an essential tool for the development of RRAM technology.

Date

01 Dec 2019

Publication

IEDM 2019

Authors

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