Spin-transfer torque MRAM with reliable 2 ns writing for last level cache applicationsGuohan HuD. Kimet al.2019IEDM 2019
Imaging, Modeling and Engineering of Strain in Gate-All-Around Nanosheet TransitorsS. RebohV. Boureauet al.2019IEDM 2019
Filamentary Statistical Evolution from Nano-Conducting Path to Switching-Filament for Oxide-RRAM in Memory ApplicationsErnest WuTakashi Andoet al.2019IEDM 2019
Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAMJohn RozenK. Suuet al.2019IEDM 2019
Metal-oxide based, CMOS-compatible ECRAM for Deep Learning AcceleratorS. KimJohn A. Ottet al.2019IEDM 2019
III-V-on-CMOS Devices and Circuits: Opportunities in Quantum InfrastructureC. B. ZotaThomas Morfet al.2019IEDM 2019
A Novel Dry Selective Etch of SiGe for the Enablement of High Performance Logic Stacked Gate-All-Around NanoSheet DevicesNicolas LoubetT. Devarajanet al.2019IEDM 2019
On-Chip Trainable 1.4M 6T2R PCM Synaptic Array with 1.6K Stochastic LIF Neurons for Spiking RBMMasatoshi IshiiU. Shinet al.2019IEDM 2019
Multiple-Vt Solutions in Nanosheet Technology for High Performance and Low Power ApplicationsRuqiang BaoReinaldo A. Vegaet al.2019IEDM 2019