MRS Proceedings 1993
Conference paper

Elecromigration damage in fine Al alloy lines due to interfacial diffusion


Both electromigration lifetime experiments and experiments of the drift velocity type have been conducted with the alloys (Al 2% Cu), Al(0.5% Cu, 0.3% Zr), and Al(0.3% pd, 0.3 Nb) also with structures with two wiring levels of Ti/Al (0.5-4% Cu)/Ti interconnected with W studs. The latter structure and these structures in general, are representative of present applications, which contain Al and alloy/W interfaces. In all cases it was found that the mass transport along the line's edges played a role in their damage formation, which was at least as great as grain boundary diffusion.