This paper investigates the coupling effect between through-silicon vias (TSVs) in large TSV array structures. A coupling analysis method for large TSV arrays is proposed. Using this method the importance of coupling between TSVs for low resistivity silicon substrates is quantified both in the frequency and time domain. This has been compared with high resistivity silicon substrates. The comparison between the two indicates the importance of jitter and voltage analysis in TSV arrays for low resistivity silicon substrates due to enhanced coupling. © 2011 IEEE.