Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
This paper describes new types of organosilicon photoresists, sensitive throughout the ultraviolet region from 2000 to 45Å. The synthesis is based upon a simple condensation reaction of 3-aminopropyl-substituted polysiloxanes with photosensitive naphthoquinone diazosulfonyl chlorides. These polymers when used in bilayer systems are very sensitive, high contrast negative photoresists with sensitivities of about 10 mJ/cm2 at 4047Å and (γ) of 1.4. Because of the inorganic polysiloxane backbone, they are resistant to oxygen plasmas, with an etch rate ratio of 50:1 (photoresist/diazosiloxane), and they are thermally stable up to 400°C. The synthetic procedure, mechanisms of crosslinking and processing characteristics of these materials are discussed along with data concerning their resolution capabilities and lithographic applications. © 1986.
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
G. Hougham, G. Tesoro, et al.
International Conference on Polyimides 1991
Lawrence Suchow, Norman R. Stemple
JES
J. Tersoff
Applied Surface Science