Publication
Microelectronic Engineering
Paper

Diazopolysiloxanes: Unique imageable barrier layers

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Abstract

This paper describes new types of organosilicon photoresists, sensitive throughout the ultraviolet region from 2000 to 45Å. The synthesis is based upon a simple condensation reaction of 3-aminopropyl-substituted polysiloxanes with photosensitive naphthoquinone diazosulfonyl chlorides. These polymers when used in bilayer systems are very sensitive, high contrast negative photoresists with sensitivities of about 10 mJ/cm2 at 4047Å and (γ) of 1.4. Because of the inorganic polysiloxane backbone, they are resistant to oxygen plasmas, with an etch rate ratio of 50:1 (photoresist/diazosiloxane), and they are thermally stable up to 400°C. The synthetic procedure, mechanisms of crosslinking and processing characteristics of these materials are discussed along with data concerning their resolution capabilities and lithographic applications. © 1986.

Date

01 Jan 1986

Publication

Microelectronic Engineering

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