Nanosheet field-effect transistors (NSFETs) have emerged as a novel device replacement for sub-7nm CMOS technology nodes. However, due to smaller fin thickness (Tfin = 5nm), NSFETs are more vulnerable to the process-induced variations. Among various types of process-induced variations, Line edge roughness (LER) is becoming a significant concern for multi-gate field-effect transistors (MugFETs) with smaller feature sizes. In this article, we have reported and compared the impact of LER on the electrical characteristics of NSFETs and nanowire field-effect transistors (NWFETs) for the sub-7nm technology node. We have generated a 3-D LER profile using 2-D Auto Covariance Function (ACVF) that considers two degrees of freedom for a realistic roughness analysis at advanced CMOS technology nodes. For a complete study of 3-D LER effect in NSFET, we have considered roughness along the nanosheet's sidewalls as well as top and bottom surfaces. We have shown using 3D TCAD simulations that the sidewall roughness in NSFETs contributes to a negligible mismatch in threshold voltage and ON current. The mismatch performance of NSFET is compared with that of the NWFET for sub-7nm technology node. NSFET appears to be more immune to mismatch in ON current than NWFETs considered in this work. On the other hand, as compared with NSFET, owing to its superior gate all-around control, the NWFET achieves lower mismatch in drain induced barrier lowering (DIBL) and subthreshold slope (SS) in presence of LER. In addition to this, FETs with different channel doping modes such as inversion (IM) and Junction less (JL) mode have been compared for their matching performance against 3-D LER. It can be concluded from the results that IM FETs are more immune to 3-D LER as compared to JL FETs.