An ultra high endurance and thermally stable selector based on TeAsGeSiSe chalcogenides compatible with BEOL IC Integration for cross-point PCM

Abstract

We present the results of a primary study on an OTS chalcogenide material system (TeAsGeSi) that incorporates Se and an extra dopant. Vth and IOFF are trade-off parameters that can be tuned by modification of OTS composition, thickness and process temperature. The resulting new selector material demonstrated excellent endurance (>1010 with 50ns-pulsed 400uA On-current) and robust OTS characteristics after 350oC/30 mins annealing. The thin film could withstand 500 oC annealing.