Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A model is presented which features an explanation for the large deviation from stoichiometry and correspondingly high hole concentration in semiconductors containing a multivalent metal in its lowest valence state. The model is based on the assumption that cation vacancy acceptor states are associated with a band which lies below the highest filled band. The energy of vacancy formation is thereby reduced by a compensating energy, Ec, which is gained as the acceptor states are filled. Using SnTe as an example, its value of Ec is estimated. © 1965.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
J. Tersoff
Applied Surface Science
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010