Microelectronic Engineering

Silylation of resist materials using di- and polyfunctional organosilicon compounds

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Different types of polyfunctional organosilicon compounds (chloro-, alkoxy-, acetoxysilanes, linear and cyclic silazanes and silylamines) were studied as silylating agents in the diffusion limited heterogeneous silylation process. It was shown that compounds with reactive silicon nitrogen bonds were most effective at silylating AZ4110 resist. Surprisingly, it was found that the higher the organosilicon compound reactivity, the lower the degree of silylation of the photoresist. One of the most effective silylating agents was found to be bis (dimethylamino)dimethylsilane (BDAMS). The chemistry of silylation of both novolak resins and 1,2,5-naphthoquinone diazo type photoactive compounds (PAC) leading to the formation of crosslinked materials is discussed. The formation of triazine derivatives was also detected. Photoresist images which were UV irradiated at 365 nm after exposure and development were found to be more amenable to silylation than those which had not. © 1990.