An 8b DAC-Based SST TX Using Metal Gate Resistors with 1.4pJ/b Efficiency at 112Gb/s PAM-4 and 8-Tap FFE in 7iim CMOS
- Marcel Kossel
- Vishal Khatri
- et al.
- ISSCC 2021
Thomas Morf was born in 1961, in Zurich, Switzerland. He received his B.S. from the Zurich University of Applied Science, Switzerland, in 1987, and his Master of Science in Electrical and Computer Engineering from the University of California at Santa Barbara (UCSB) in 1991.
From 1989 to 1991, he worked as a research assistant at UCSB, performing research in the field of active microwave inductors and digital GaAs circuits. In 1991, he joined the Swiss Federal Institute of Technology (ETH) in Zurich, Switzerland, from where he received his Ph.D. in 1996. His Ph.D. work investigated circuit design and processing for high-speed optical links on GaAs using epitaxial lift-off techniques.
In 1996, he transferred to the Electronics Laboratory of the ETH, where he led a research group in the area of InP-HBT circuit design and technology. In 1999, he joined IBM Research – Zurich in Rueschlikon, Switzerland.
His current research interests include: ESD circuit protection, electrical and optical high-speed high-density interconnects, on chip coil modelling and cryogenic electronics for quantum computing. Dr. Morf has co-authored more than 190 papers and is co-inventor of more than 45 issued patents.