The formation of ß SiC on Si
- M. Balog
- A. Reisman
- et al.
- 1980
- Journal of Electronic Materials
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Liquid crystal alignment films produced by the R.F. Plasma beam technique
- G.J. Sprokel
- 1980
- Journal of Electronic Materials
Annealing of radiation-induced positive charge in MOS devices with aluminum and polysilicon gate contacts
- J.M. Aitken
- 1980
- Journal of Electronic Materials
Filamentary AC electroluminescence in ZnS:Mn
- W. Rühle
- V. Marrello
- et al.
- 1979
- Journal of Electronic Materials
The formation of silicides in Mo-W Bilayer films on si substrates: A marker experiment
- J.E.E. Baglin
- J. Dempsey
- et al.
- 1979
- Journal of Electronic Materials
Photoluminescence in polycrystalline GaAs AT 5K
- P.B. Perry
- A.E. Blakeslee
- 1979
- Journal of Electronic Materials
Speed considerations for electrochromic displays
- D.J. Barclay
- C.L. Bird
- et al.
- 1979
- Journal of Electronic Materials
The effect of cathode materials on reactive ion etching of silicon and silicon dioxide in a CF4 plasma
- L.M. Ephrath
- 1978
- Journal of Electronic Materials
The electron trapping behavior of silicon dioxide with ion implanted aluminum
- D.R. Young
- D.J. DiMaria
- et al.
- 1977
- Journal of Electronic Materials
Use of photocurrent-voltage characteristics of MOS structures to determine insulator bulk trapped charge densities and centroids
- D.J. DiMaria
- Z.A. Weinberg
- et al.
- 1977
- Journal of Electronic Materials