Publication
Journal of Electronic Materials
Paper

Photoluminescence in polycrystalline GaAs AT 5K

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Abstract

Photoluminescence at 5K is used to measure the radiative recombination in a potential solar cell material -- polycrystalline GaAs. In some samples the elecron-hole pair recombination is extremely efficient, yielding luminescence intensities up to 40% of that of monocrystalline GaAs. These samples are characterized by a peak at approximately 1.49eV, which is similar to that observed in the monocrystalline GaAs. However in other samples a broad, less intense band at approximately 1.47eV is seen. © 1979 AIME.

Date

01 Sep 1979

Publication

Journal of Electronic Materials

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