Filamentary AC electroluminescence in ZnS:Mn

Abstract

Steady state and switching behavior of single luminescence filaments in a-BaTiO3/ZnS:Mn/a-BaTiO3 ac thin film electroluminescence devices have been studied. The brightness-voltage amplitude hysteresis, or memory effect, of these devices results from the ensemble behavior of luminescing filaments that are bistable in their luminescence level. A trap depth of 1-1.2eV is estimated on the assumption that the voltage threshold for luminescence involves electric field emission from traps. The temperature dependence of electroluminescence near the threshold voltage is investigated. © 1979 AIME.