Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
ß-SiC was formed on Si substrates in an horizontal, rf powered reactor. The reaction of Si with CH4} was either directly at temperatures of 1200-1350‡C or by a two step reaction in which CH4} was first cracked at 900‡C and then the deposited C reacted with Si at temperatures of 1200-1350‡C. Important features of the study were the minimization of contam-inants from susceptor and substrate support materials, removal of native oxides and a novel susceptor design. A rectangular, TaC coated Ta susceptor was used in conjunction with sapphire supports. Preheated He was used as a carrier gas. Growth characteristics and film structure are presented as a function of CH4} concentration and substrate temperature. © 1980 AIME.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
T.N. Morgan
Semiconductor Science and Technology
Gregory Czap, Kyungju Noh, et al.
APS Global Physics Summit 2025