ß-SiC was formed on Si substrates in an horizontal, rf powered reactor. The reaction of Si with CH4} was either directly at temperatures of 1200-1350‡C or by a two step reaction in which CH4} was first cracked at 900‡C and then the deposited C reacted with Si at temperatures of 1200-1350‡C. Important features of the study were the minimization of contam-inants from susceptor and substrate support materials, removal of native oxides and a novel susceptor design. A rectangular, TaC coated Ta susceptor was used in conjunction with sapphire supports. Preheated He was used as a carrier gas. Growth characteristics and film structure are presented as a function of CH4} concentration and substrate temperature. © 1980 AIME.