Characterizing fluorocarbon assisted atomic layer etching of Si using cyclic Ar/C4F8 and Ar/CHF3 plasma
- Dominik Metzler
- Chen Li
- et al.
- 2016
- Journal of Chemical Physics
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79 results for Eric Joseph
Centering Sustainability in Process Development Through Improved Characterization of HFC-PFC Byproducts
- 2024
- IEEE Trans Semicond Manuf
Etching with electron beam-generated plasmas: Selectivity versus ion energy in silicon-based films
- S. G. Walton
- D. R. Boris
- et al.
- 2021
- JVSTA
Significance of plasma-photoresist interactions for atomic layer etching processes with extreme ultraviolet photoresist
- Adam Pranda
- Kang Yi Lin
- et al.
- 2020
- JVSTA
Selective atomic layer etching of HfO2 over silicon by precursor and substrate-dependent selective deposition
- Kang Yi Lin
- Chen Li
- et al.
- 2020
- JVSTA
Achieving ultrahigh etching selectivity of SiO2 over Si3N4 and Si in atomic layer etching by exploiting chemistry of complex hydrofluorocarbon precursors
- Kang Yi Lin
- Chen Li
- et al.
- 2018
- JVSTA
Nitride etching with hydrofluorocarbons III: Comparison of C4H9F and CH3F for low-k′ nitride spacer etch processes
- Hiroyuki Miyazoe
- Nathan Marchack
- et al.
- 2018
- JVSTB
Nitride etching with hydrofluorocarbons. II. Evaluation of C4H9F for tight pitch Si3N4 patterning applications
- Nathan Marchack
- Hiroyuki Miyazoe
- et al.
- 2018
- JVSTB
Nitride etching with hydrofluorocarbons. I. Selective etching of nitride over silicon and oxide materials by gas discharge optimization and selective deposition of fluorocarbon polymer
- Sebastian U. Engelmann
- Robert L. Bruce
- et al.
- 2017
- JVSTB
Cyclic Cl2/H2 quasi-atomic layer etching approach for TiN and TaN patterning using organic masks
- Nathan Marchack
- J. M. Papalia
- et al.
- 2017
- JVSTA