A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
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81 results for Eric Joseph
Racetrack memory cell array with integrated magnetic tunnel junction readout
- A. Annunziata
- M.C. Gaidis
- et al.
- 2011
- IEDM 2011
A method to maintain phase-change memory pre-coding data retention after high temperature solder bonding process in embedded systems
- H.L. Lung
- Matthew Breitwisch
- et al.
- 2011
- VLSI Technology 2011
A 0.021 μm2 trigate SRAM cell with aggressively scaled gate and contact pitch
- Michael A. Guillorn
- Josephine Chang
- et al.
- 2011
- VLSI Technology 2011
Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials
- R.S. Shenoy
- K. Gopalakrishnan
- et al.
- 2011
- VLSI Technology 2011
Characterizing the effects of etch-induced material modification on the crystallization properties of nitrogen doped Ge2Sb2Te 5
- J.S. Washington
- Eric A. Joseph
- et al.
- 2011
- Journal of Applied Physics
Metallization opportunities and challenges for future back-end-of-the-line technology
- Cyril Cabral Jr.
- Benjamin Fletcher
- et al.
- 2010
- ADMETA 2010
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
- Sarunya Bangsaruntip
- A. Majumdar
- et al.
- 2010
- VLSI Technology 2010
Fabrication of dual damascene BEOL structures using a multi-level multiple exposure (MLME) scheme - Part 2. RIE-based pattern transfer and completion of dual damascene process yielding an electrically functional via chain
- Stefan Harrer
- John C Arnold
- et al.
- 2010
- Proceedings of SPIE - The International Society for Optical Engineering 2010