Line edge roughness and spacing effect on low-k TDDB characteristicsF. ChenJ.R. Lloydet al.2008IRPS 2008
Improved electromigration lifetime for copper interconnects using tantalum implantJeff GambinoTimothy D. Sullivanet al.2007MRS Spring Meeting 2007
A 45 nm CMOS node Cu/low-k/ ULtra low-k PECVD SiCOH (k=2.4) BEOL technologyS. SankaranS. Araiet al.2006IEDM 2006
A comprehensive study of low-k SiCOH TDDB phenomena and its reliability lifetime model developmentF. ChenO. Bravoet al.2006IRPS 2006
65nm Cu integration and interconnect reliability in low stress K=2.75 SiCOHV. McGahayG. Bonillaet al.2006IITC 2006
BEOL process integration with Cu/SiCOH (k=2.8) low-k interconnects at 65nm groundrulesS. LaneM. Fukasawaet al.2005AMC 2005
A SiCOH BEOL interconnect technology for high density and high performance 65 nm CMOS applicationsMatthew AngyalJason Gillet al.2005AMC 2005
PECVD Low-k (∼2.7) dielectric SiCOH film development and integration for 65 nm CMOS devicesK. IdaS. Nguyenet al.2005AMC 2005
Determination of the thermal conductivity of composite low-k dielectrics for advanced interconnect structuresF. ChenJ. Gillet al.2006Microelectronics Reliability