BEOL process integration for the 7 nm technology node

T. Standaert; Genevieve Beique; H.-C. Chen; Shyng-Tsong Chen; Bassem Hamieh; Joe Lee; P. S. McLaughlin; J. McMahon; Yann Mignot; F. Mont; Koichi Motoyama; Son Van Nguyen; Raghuveer Patlolla; B. Peethala; Deepika Priyadarshini; M. Rizzolo; Nicole Saulnier; Hosadurga Shobha; S. Siddiqui; Terry A. Spooner; Hao Tang; O. Van Der Straten; Erik Verduijn; Y. Xu; X. Zhang; John Arnold; Donald Canaperi; Matthew Colburn; Daniel C. Edelstein; Vamsi Paruchuri; Griselda Bonilla

doi:10.1109/IITC-AMC.2016.7507636

Publication

IITC/AMC 2016

Conference paper

BEOL process integration for the 7 nm technology node

IITC/AMC 2016

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Abstract

A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.

Date

08 Jul 2016

Publication

IITC/AMC 2016

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