Publication
IITC/AMC 2016
Conference paper

BEOL process integration for the 7 nm technology node

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Abstract

A 36 nm pitch BEOL has been evaluated for the 7 nm technology node. EUV lithography was employed as a single-exposure patterning solution. For the first time, it is shown that excellent reliability results can be obtained for Cu interconnects at these small dimensions, by using a TaN/Ru barrier system and a selective Co cap.

Date

08 Jul 2016

Publication

IITC/AMC 2016

Authors

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