VLSI Technology 2016
Conference paper

Selective GeOx-scavenging from interfacial layer on Si1-xGex channel for high mobility Si/Si1-xGex CMOS application

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We demonstrate a technique for selective GeOx-scavenging which creates a GeOx-free IL on Si1-xGex substrates. This process reduces Nit by >60% to 2e11 and increases high-field mobility at Ninv=1e13 cm-2 by ∼1.3× in Si0.6Ge0.4 pFETs with sub-nm EOT.