Publication
VLSI Technology 2017
Conference paper

Comparison of key fine-line BEOL metallization schemes for beyond 7 nm node

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Abstract

For beyond 7 nm node BEOL, line resistance (R) is assessed among four metallization schemes: Ru; Co; Cu with TaN/Ru barrier, and Cu with through-cobalt self-forming barrier (tCoSFB) [1]. Line-R vs. linewidth of Cu fine wires with TaN/Ru barrier crosses over with barrier-less Ru and Co wires for beyond-7 nm node dimensions, whereas Cu with tCoSFB remains competitive, with the lowest line R for 7 nm and beyond. Our study suggests promise of this last scheme to meet requirements in line R and EM reliability.

Date

31 Jul 2017

Publication

VLSI Technology 2017

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