Publications

76 results for Huiming Bu

Air spacer for 10nm FinFET CMOS and beyond
- - K. Cheng
  - C. Park
  - et al.
- 2016
- IEDM 2016
Technology viable DC performance elements for Si/SiGe channel CMOS FinFTT
- - G. Tsutsui
  - Ruqiang Bao
  - et al.
- 2016
- IEDM 2016
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
- - Ruilong Xie
  - Pietro Montanini
  - et al.
- 2016
- IEDM 2016
Sub-10^-9 Ω-cm² n-Type Contact Resistivity for FinFET Technology
- - Hiroaki Niimi
  - Zuoguang Liu
  - et al.
- 2016
- IEEE Electron Device Letters
FINFET technology featuring high mobility SiGe channel for 10nm and beyond
- - Dechao Guo
  - G. Karve
  - et al.
- 2016
- VLSI Technology 2016
A novel ALD SiBCN low-k spacer for parasitic capacitance reduction in FinFETs
- - Tenko Yamashita
  - S. Mehta
  - et al.
- 2015
- VLSI Technology 2015
Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology
- - Takashi Ando
  - Tenko Yamashita
  - et al.
- 2015
- IEDM 2015
Bottom oxidation through STI (BOTS) - A novel approach to fabricate dielectric isolated FinFETs on bulk substrates
- - K. Cheng
  - S.-C. Seo
  - et al.
- 2014
- VLSI Technology 2014
Dielectric isolated FinFETs on bulk substrate
- - Darsen Lu
  - Kangguo Cheng
  - et al.
- 2014
- S3S 2014
10nm FINFET technology for low power and high performance applications
- - D. Guo
  - H. Shang
  - et al.
- 2014
- ICSICT 2014