Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology

Abstract

We identified unique device width and length dependencies of Vt for FinFET Replacement Metal Gate (RMG). Choice of fill metal is important to obtain a flat Vt-Wdes trend. We proposed a new model for Vt-Lg roll-up for High-k last RMG and demonstrated a flat Vt-Lg trend via optimization of High-k and MOL films based on the understanding.