Publication
IEDM 2015
Conference paper

Understanding and mitigating High-k induced device width and length dependencies for FinFET replacement metal gate technology

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Abstract

We identified unique device width and length dependencies of Vt for FinFET Replacement Metal Gate (RMG). Choice of fill metal is important to obtain a flat Vt-Wdes trend. We proposed a new model for Vt-Lg roll-up for High-k last RMG and demonstrated a flat Vt-Lg trend via optimization of High-k and MOL films based on the understanding.

Date

16 Feb 2015

Publication

IEDM 2015

Authors

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