Dual work function metal gate CMOS using CVD metal electrodes
- V. Narayanan
- A.C. Callegari
- et al.
- 2004
- VLSI Technology 2004
Conference paper
Publications
205 results for Vijay Narayanan
Dual workfunction fully silicided metal gates
- C. Cabral Jr.
- J. Kedzierski
- et al.
- 2004
- VLSI Technology 2004
Conference paperThe physical properties of cubic plasma-enhanced atomic layer deposition TaN films
- H. Kim
- C. Lavoie
- et al.
- 2004
- Journal of Applied Physics
PaperDegradation of ultra-thin oxides with tungsten gates under high voltage: Wear-out and breakdown transient
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- IRPS 2004
Conference paperReliability of MOS devices with tungsten gates
- F. Palumbo
- S. Lombardo
- et al.
- 2004
- Microelectronic Engineering
PaperEpitaxial silicon and germanium on buried insulator heterostructures and devices
- N.A. Bojarczuk
- M. Copel
- et al.
- 2003
- Applied Physics Letters
PaperDevice Design Considerations for Ultra-Thin SOI MOSFETs
- B. Doris
- M. Ieong
- et al.
- 2003
- IEDM 2003
Conference paperEpitaxial Si films grown on lattice matched (LaxY 1-x)O3/Si (111) structures by molecular beam epitaxy
- V. Narayanan
- S. Guha
- et al.
- 2002
- MRS Proceedings 2002
Conference paperGrowth and characterization of epitaxial Si/(LaxY1-x)2O3/Si heterostructures
- Vijay Narayanan
- Supratik Guha
- et al.
- 2002
- Journal of Applied Physics
PaperInterfacial oxide formation and oxygen diffusion in rare earth oxide-silicon epitaxial heterostructures
- V. Narayanan
- S. Guha
- et al.
- 2002
- Applied Physics Letters
Paper