M. Gribelyuk, C. Cabral Jr., et al.
Thin Solid Films
An analysis of silicate/Si(001) interfaces was discussed. The solid-state reaction of yttria and silicon oxynitride was used to create gate dielectrics with a direct yttrium silicate-silicon interface. The complete consumption of the underlying oxide through silicate formation during high-temperature annealing was indicated by medium-energy ion scattering. The small flat-band voltage shifts, indicating low quantities of charge without passivation steps was exhibited by silicate dielectrics.
M. Gribelyuk, C. Cabral Jr., et al.
Thin Solid Films
Soon-Cheon Seo, L.F. Edge, et al.
VLSI Technology 2011
J.A. Yarmoff, S.A. Joyce, et al.
Journal of Electron Spectroscopy and Related Phenomena
R.E. Stahlbush, E. Cartier
IEEE TNS