The past, present and future of high-k/metal gates
Kisik Choi, Takashi Ando, et al.
ECS Meeting 2013
The effect of growth temperature on the growth mode and characterization of Si/(LaxY1-x)2O3/Si heterostructures was investigated. The fluorite and bixbyite epitaxy on silicon was investigated in the framework of a model which suggested that the mismatch between oxygen sublattice and silicon substrate was important for establishing epitaxial relations. The formation of a phase separated microstructure due to the low compressibility of epitaxial films prevented the perfect lattice matching of films to silicon.
Kisik Choi, Takashi Ando, et al.
ECS Meeting 2013
Masaru Tsuchiya, Nestor A. Bojarczuk, et al.
Applied Physics Letters
Rajan K. Pandey, Rajesh Sathiyanarayanan, et al.
Journal of Applied Physics
Supratik Guha, Nestor A. Bojarczuk
Applied Physics Letters