Electrical properties and reliability of ALD TaN barrier for sub-90nmPitch Cu interconnects
- Tibor Bolom
- J. Lee
- et al.
- 2013
- ADMETA 2013
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62 results for Andrew Simon
Electromigration comparison of selective CVD cobalt capping with PVD Ta(N) and CVD cobalt liners on 22nm-groundrule dual-damascene Cu interconnects
- A. Simon
- Tibor Bolom
- et al.
- 2013
- IRPS 2013
Microstructure, impurity and metal cap effects on Cu electromigration
- C. K. Hu
- Lynne Gignac
- et al.
- 2012
- AIP-CP 2012
Effects of Al and Mn impurities on Cu electromigration
- C.-K. Hu
- J. Ohm
- et al.
- 2011
- ADMETA 2011
Mn-dopant segregation as an indicator of barrier integrity in 32nm groundrule Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder H. Baumann
- et al.
- 2011
- ADMETA 2011
Invasion percolation model for abnormal TDDB characteristic of ULK dielectrics with Cu interconnect at advanced technology nodes
- F. Chen
- Michael Shinosky
- et al.
- 2011
- IRPS 2011
Effect of impurity on Cu electromigration
- C.-K. Hu
- Matthew Angyal
- et al.
- 2010
- International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
CVD Co and its application to Cu damascene interconnections
- Takeshi Nogami
- J. Maniscalco
- et al.
- 2010
- IITC 2010
Effect of TaN stoichiometry on barrier oxidation and defect density in 32nm Cu/ultra-low K interconnects
- Andrew H. Simon
- Frieder Baumann
- et al.
- 2010
- MRS Online Proceedings Library
Ionized-PVD stacked barrier structure of TaN/TaRu for 32nm BEOL integration
- Takeshi Nogami
- Chih-Chao Yang
- et al.
- 2008
- ADMETA 2008