Publications

169 results for Jim Stathis

Influence and model of gate oxide breakdown on CMOS inverters
- - R. Rodríguez
  - J.H. Stathis
  - et al.
- 2003
- Microelectronics Reliability
Reliability of ultra-thin oxides in CMOS circuits
- - J.H. Stathis
  - B.P. Linder
  - et al.
- 2003
- Microelectronics Reliability
Circuit implications of gate oxide breakdown
- - J.H. Stathis
  - R. Rodríguez
  - et al.
- 2003
- Microelectronics Reliability
Growth and scaling of oxide conduction after breakdown
- - Barry P. Linder
  - James H. Stathis
  - et al.
- 2003
- IRPS 2003
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- - R. Rodríguez
  - J.H. Stathis
  - et al.
- 2003
- IRPS 2003
Breakdown transients in ultrathin gate oxides: Transition in the degradation rate
- - S. Lombardo
  - J.H. Stathis
  - et al.
- 2003
- Physical Review Letters
Breakdown Transients in Ultrathin Gate Oxides: Transition in the Degradation Rate
- - S. Lombardo
  - J.H. Stathis
  - et al.
- 2003
- Physical Review Letters
Growth and scaling of oxide conduction after breakdown
- - Barry P. Linder
  - James H. Stathis
  - et al.
- 2003
- IRPS 2003
Modeling and experimental verification of the effect of gate oxide breakdown on CMOS inverters
- - R. Rodríguez
  - J.H. Stathis
  - et al.
- 2003
- IRPS 2003
A model for gate-oxide breakdown in CMOS inverters
- - R. Rodríguez
  - J.H. Stathis
  - et al.
- 2003
- IEEE Electron Device Letters