A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
A model for the oxide breakdown (BD) current-voltage (I-V) characteristics has been experimentally verified on CMOS inverters. The implications of oxide BD on the performance of various CMOS circuit elements are discussed. Examples are shown of cell stability and bitline differentials in static memory (SRAM), signal timing, and inverter chains. © 2003 Elsevier Ltd. All rights reserved.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
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Physics of Fluids
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Daniel J. Coady, Amanda C. Engler, et al.
ACS Macro Letters