Centroid location of implanted ions in the SiO2 layer of MOS structures using the photo I-V technique)
- D.J. DiMaria
- D.R. Young
- et al.
- 2008
- Journal of Applied Physics
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13 results for C.M. Serrano
Secondary dislocation climb during optical excitation of GaAs laser material
- G.R. Woolhouse
- B. Monemar
- et al.
- 2008
- Applied Physics Letters
Studies by cross-sectional transmission electron microscope of InAs grown by molecular beam epitaxy on GaAs substrates
- Chin-An Chang
- C.M. Serrano
- et al.
- 2008
- Applied Physics Letters
Reducing the grain size of polycrystalline lead films by the use of barriers to grain growth
- Maria Ronay
- C.M. Serrano
- 1983
- Journal of Applied Physics
Preparation of Pb-Bi film by alloy evaporation II. Microstructure and morphology
- H.-C.W. Huang
- C.M. Serrano
- 1983
- JVSTA
Summary Abstract: Preparation of Pb-Bi film by alloy evaporation II. Microstructure and morphology
- H.-C.W. Huang
- C.M. Serrano
- 1983
- JVSTA
Reducing the grain size of polycrystalline lead films by the use of nucleants
- Maria Ronay
- C.F. Aliotta
- et al.
- 1982
- Journal of Applied Physics
Thermal stability of Pb-alloy Josephson junction electrode materials. III. Correlation of microstructure and strain in Pb-In-Au base electrodes
- Masanori Murakami
- Carlos M. Serrano
- 1982
- Journal of Applied Physics
Epitaxial A1 films on GaAs(100) surfaces
- G. Landgren
- R. Ludeke
- et al.
- 1982
- Journal of Crystal Growth
Electrically-alterable read-only-memory using Si-rich SiO2 injectors and a floating polycrystalline silicon storage layer
- D.J. DiMaria
- K.M. DeMeyer
- et al.
- 1981
- Journal of Applied Physics