L.L. Chang
Solid-State Electronics
We have used the cross-sectional transmission electron microscope to study InAs grown by molecular beam epitaxy. For the InAs films directly grown on GaAs, the dislocation density at the InAs-GaAs interface is several orders of magnitude higher than that in the bulk films. Those grown by the step grading technique show strong interactions among dislocations at the interfaces, and a much reduced dislocation density in the thin InAs layers.
L.L. Chang
Solid-State Electronics
J. Beerens, G. Grégoris, et al.
Physical Review B
W.I. Wang, E. Mendez, et al.
IEEE T-ED
Chin-An Chang
Applied Physics Letters