Abstract
In the present work we demonstrate the successful implementation of tunneling field-effect transistors (TFETs) based on silicon nanowires (Si NWs) that were grown using the vapor-liquid-solid (VLS) growth method. Device optimization resulted in increased band-to-band tunneling with an on-current of 0.5μA/μm, and Ion/Ioff ratio of about 6 decades combined with an inverse subthreshold slope (SS) of around 100mV/dec over several decades of current and even sub-60mV/dec for the lowest currents. © 2009 IEEE.