Solving optimization tasks power-efficiently exploiting VO2’s phase-change properties with Oscillating Neural Networks
- Olivier Maher
- Nele Harnack
- et al.
- Device Research Conference 2023
Dr. Siegfried (Sigi) Karg is a Research Staff Member in the Nanoscale Devices & Materials group of the Science & Technology department at IBM Research – Zurich. He joined IBM in 2000 and worked on the physics and materials science of organic and polymer devices, resistive memories based on oxides and, most recently, on capacitorless eDRAM based on III-V semiconductor transistors. Moreover, he investigated the one-dimensional electronic and thermoelectrical properties of InAs nanostructures. His current research fields include also brain-inspired computing applications exploiting oscillatory neural networks (with electronic oscillators based on the metal-insulator transition of VO2).
Siegfried Karg studied Physics at the University of Bayreuth, Germany. After receiving his PhD, he joined the IBM Almaden Research Center as a postdoctoral fellow in 1995. From 1997 to 1999, he led the organic semiconductor group at Darmstadt University of Technology, Materials Research department.
Dr. Karg has authored about 100 publications and filed more than 35 patents.