PaperElectron trapping at positively charged centers in SiO2T.H. Ning, C.M. Osburn, et al.Applied Physics Letters
Conference paperEFFECT OF CONTACTS ON ADVANCED BIPOLAR DEVICE CHARACTERISTICS.T.H. NingECS Meeting 1983
PaperHeterojunction bipolar transistors with hydrogenated amorphous silicon contacts on crystalline siliconBahman Hekmatshoar, T.H. NingElectronics Letters
Conference paper0.25μm low power CMOS devices and circuits from 8 inch SOI materialsB. Chen, A.S. Yapsir, et al.ICSICT 1995