T.H. Ning, C.M. Osburn, et al.
Applied Physics Letters
Hole trapping in thermally grown silicon-dioxide films has been studied using optically induced hot-hole injection in p-channel polysilicon-SiO 2-silicon field-effect-transistor structures. Analysis of the data assuming a uniform trap distribution and no detrapping gives 3.1×10 -13 cm2 and 1.4×1018 cm-3 for the capture cross section and the trap concentration, respectively. Initial hole-trapping efficiency is almost 99% for a 1000-Å SiO2 film.
T.H. Ning, C.M. Osburn, et al.
Applied Physics Letters
T.H. Ning
Microelectronics and VLSI, TENCON 1995
T.H. Ning, C.M. Osburn, et al.
Applied Physics Letters
C.T. Chuang, G.P. Li, et al.
ECS Meeting 1984