About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Paper
Capture cross section and trap concentration of holes in silicon dioxide
Abstract
Hole trapping in thermally grown silicon-dioxide films has been studied using optically induced hot-hole injection in p-channel polysilicon-SiO 2-silicon field-effect-transistor structures. Analysis of the data assuming a uniform trap distribution and no detrapping gives 3.1×10 -13 cm2 and 1.4×1018 cm-3 for the capture cross section and the trap concentration, respectively. Initial hole-trapping efficiency is almost 99% for a 1000-Å SiO2 film.
Related
Conference paper
SPT CELL - A NEW SUBSTRATE - PLATE TRENCH CELL FOR DRAMS.
Conference paper