C.C.-H. Hsu, L.K. Wang, et al.
IRPS 1989
A brief historical account of the development of advanced silicon bipolar transistors (SBTs) at IBM Research is described, with a focus on discussing the technical merits of the directions taken. A perspective on the future of silicon bipolar is given, including a discussion on the merits of SiGe-base transistors, and on the scaling limits of both Si-base and SiGe-base transistors. An apples-to-apples comparison of SiGe-base transistors and GaAs HBTs is made, showing that GaAs HBTs are inherently faster and more scaleable than SiGe-base transistors.
C.C.-H. Hsu, L.K. Wang, et al.
IRPS 1989
T.H. Ning, C.T. Sah
Physical Review B
T.H. Ning
MRS Spring Meeting 1996
T.H. Ning, C.M. Osburn, et al.
Applied Physics Letters