Conference paper
A high performance 0.15 μm CMOS
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993
A brief historical account of the development of advanced silicon bipolar transistors (SBTs) at IBM Research is described, with a focus on discussing the technical merits of the directions taken. A perspective on the future of silicon bipolar is given, including a discussion on the merits of SiGe-base transistors, and on the scaling limits of both Si-base and SiGe-base transistors. An apples-to-apples comparison of SiGe-base transistors and GaAs HBTs is made, showing that GaAs HBTs are inherently faster and more scaleable than SiGe-base transistors.
G. Shahidi, J. Warnock, et al.
VLSI Technology 1993
T.C. Chen, C. Kaya, et al.
IEDM 1985
C.C.-H. Hsu, D.S. Wen, et al.
IEDM 1989
T.H. Ning
ICSICT 1995