C.C.-H. Hsu, L.K. Wang, et al.
Journal of Electronic Materials
Paper
Thermal stability of TiSi2 on mono- and polycrystalline silicon
Abstract
Thermal stability of TiSi2 on mono- and polycrystalline silicon was investigated by cross-sectional transmission electron microscopy and high-resolution electron energy loss spectroscopy. Additional heat treatments after silicide formation result in a rough silicide/silicon interface, discontinuity of the metal silicide film, and a penetration of silicide into silicon/polycrystalline silicon substrates. Plausible explanations for these observations are presented.
Related
Fang-Shi J. Lai, L.K. Wang, et al.
IEEE T-ED
Conference paper
Doping of n+ and p+ polysilicon in a dual-gate CMOS process
C.Y. Wong, J.Y.-C. Sun, et al.
IEDM 1988
Conference paper
Material development of SIMOX with a thin box
D.K. Sadana, H.J. Hovel, et al.
IEEE International SOI Conference 1993