The chemisorption and reaction of GeCl₄ with Si(100)

Abstract

The chemisorption of GeCl4 on Si(100) as a function of substrate temperature was investigated by soft X-ray photoemission spectroscopy. At a substrate temperature of 300°C, GeCl4 chemisorbs dissociatively forming GeCl2 and GeCl species as well as elemental Ge bonding to Si. At higher temperatures we observe the loss of GeCl2, but trace amounts of GeCl remain on the surface until a temperature of about 500°C is attained. In addition, the decomposition of GeCl4 promotes the formation of SiCl surface species at all substrate temperatures. A maximum amount of adsorbed Cl has been observed to bond to the Si surface following an exposure at 500°C. © 1993.