A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
The effect of growth conditions on interfacial roughness in InAs/GaAs hetcrostructures prepared by molecular beam epitaxy has been investigated using synchrotron radiation. Measurement of grazing incidence X-ray reflectivity (GIXR) and total electron yield (TEY) in the soft X-ray wavelengths are used for nondestructive characterization of interfacial roughness in these semiconductor heterojunctions. Our results indicate that a smoothing process takes place during epitaxial growth, and that the measured interfacial roughness is lowest for In-stabilized deposition on a GaAs substrate at 2° off (100), and highest with As-stabilized overgrowth on GaAs(100). The surface and interfacial roughness are practically independent of the layer thickness in the range investigated (70-600 Å). © 1990.
A.B. McLean, R.H. Williams
Journal of Physics C: Solid State Physics
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films