U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
The effect of growth conditions on interfacial roughness in InAs/GaAs hetcrostructures prepared by molecular beam epitaxy has been investigated using synchrotron radiation. Measurement of grazing incidence X-ray reflectivity (GIXR) and total electron yield (TEY) in the soft X-ray wavelengths are used for nondestructive characterization of interfacial roughness in these semiconductor heterojunctions. Our results indicate that a smoothing process takes place during epitaxial growth, and that the measured interfacial roughness is lowest for In-stabilized deposition on a GaAs substrate at 2° off (100), and highest with As-stabilized overgrowth on GaAs(100). The surface and interfacial roughness are practically independent of the layer thickness in the range investigated (70-600 Å). © 1990.
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007