J.Z. Sun, W.J. Gallagher, et al.
IEEE TAS
The fabrication of a two terminal spin-injection device was performed. A nanostencil process with a Co-Cu-Co stack was used for the fabrication. The stack could be deposited both by electron-beam evaporation and by sputtering. Both methods showed spin-injection-induced magnetic switching.
J.Z. Sun, W.J. Gallagher, et al.
IEEE TAS
T.S. Kuan, Subramanian S. Iyer
SPIE Advances in Semiconductors and Superconductors 1990
Solomon Assefa, J. Nowak, et al.
Journal of Applied Physics
P. Agnello, T.O. Sedgwick, et al.
Applied Physics Letters