Si and gaas 0.5 /µm-gate schottky-barrier field-effect transistors

Abstract

Si and GaAs Schottky-barrier field-effect transistors with gate lengths of 0.5 µm have been experimentally realised. Noise and gain properties were measured in the microwave range up to 20 GHz. When compared with 1 µm-gate f.e.t.s, the devices show considerable improvements in gain and in noise figure. At 10 GHz, the following values were measured: Si m.e.s.f.e.t.: maximum available gain = 5.9 dB, noise figure = 5.8 dB; GaAs m.e.s.f.e.t.: maximum available gain = 12.8 dB, noise figure = 3.7 dB. © 1973, The Institution of Electrical Engineers. All rights reserved.