About cookies on this site Our websites require some cookies to function properly (required). In addition, other cookies may be used with your consent to analyze site usage, improve the user experience and for advertising. For more information, please review your options. By visiting our website, you agree to our processing of information as described in IBM’sprivacy statement. To provide a smooth navigation, your cookie preferences will be shared across the IBM web domains listed here.
Publication
ISSCC 1972
Conference paper
X-and Ku-band amplifiers with GaAs schottky-barrier FETs
Abstract
DURING RECENT years GaAs technology has made significant progress and it is now possible to produce GaAs field-effect transistors with very small gate lengths1. An improved GaAs FET has been reported, which shows good gain and noise properties up to the Ku band2. The application of microwave FETs has thus far been restricted to narrow band amplifiers and oscillators3-5. In this paper it will be shown that GaAs FETs are also very well-suited for low-noise broad-band amplifiers in the X-and Ku-band.