Publication
ISSCC 1972
Conference paper

X-and Ku-band amplifiers with GaAs schottky-barrier FETs

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Abstract

DURING RECENT years GaAs technology has made significant progress and it is now possible to produce GaAs field-effect transistors with very small gate lengths1. An improved GaAs FET has been reported, which shows good gain and noise properties up to the Ku band2. The application of microwave FETs has thus far been restricted to narrow band amplifiers and oscillators3-5. In this paper it will be shown that GaAs FETs are also very well-suited for low-noise broad-band amplifiers in the X-and Ku-band.

Date

16 Feb 1972

Publication

ISSCC 1972

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