Publication
Electronics Letters
Paper

Q band gaas F.E.T. amplifier and oscillator

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Abstract

GaAs field-effect transistors with a Schottky-barrier gate have been investigated in the frequency range 12-20 GHz. Measurements of the maximum available gain have shown that the devices have much higher gain in this range than has been expected. A 17 GHz oscillator having an output power of 4 mW and a 4-stage 14 9 GHz amplifier with 16 dB of power gain have been built using stripline technique. © 1971, The Institution of Electrical Engineers. All rights reserved.

Date

20 May 1971

Publication

Electronics Letters

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