J.E.E. Baglin, F.M. D'Heurle, et al.
Journal of Applied Physics
Shallow (<0.2 μm) n+ layers in Si with high conductivity (<40 Ω/□) have been formed by high-dose (2×1016 cm-2) As implants. Experimental observations of As distributions and carrier concentrations are successfully simulated by a computer program which accounts for both the concentration dependent diffusion and As clustering effects. Reduction of electrical carriers in high-dose As implanted Si during moderate temperature (∼800 °C) heat treatments is readily explained by the kinetics of As clustering. Physical limitations on the conductivity which can be achieved by thermally annealed As implants in Si are also discussed.
J.E.E. Baglin, F.M. D'Heurle, et al.
Journal of Applied Physics
S. García-Blanco, A.J. Kellock, et al.
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
J.E.E. Baglin
Nuclear Inst. and Methods in Physics Research, B
C.W. White, G. Farlow, et al.
Materials Letters