Publication
Journal of Applied Physics
Paper

Shallow junctions by high-dose As implants in Si: Experiments and modeling

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Abstract

Shallow (<0.2 μm) n+ layers in Si with high conductivity (<40 Ω/□) have been formed by high-dose (2×1016 cm-2) As implants. Experimental observations of As distributions and carrier concentrations are successfully simulated by a computer program which accounts for both the concentration dependent diffusion and As clustering effects. Reduction of electrical carriers in high-dose As implanted Si during moderate temperature (∼800 °C) heat treatments is readily explained by the kinetics of As clustering. Physical limitations on the conductivity which can be achieved by thermally annealed As implants in Si are also discussed.

Date

09 Jul 2008

Publication

Journal of Applied Physics

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