Shallow junctions by high-dose As implants in Si: Experiments and modeling

Abstract

Shallow (<0.2 μm) n+ layers in Si with high conductivity (<40 Ω/□) have been formed by high-dose (2×1016 cm-2) As implants. Experimental observations of As distributions and carrier concentrations are successfully simulated by a computer program which accounts for both the concentration dependent diffusion and As clustering effects. Reduction of electrical carriers in high-dose As implanted Si during moderate temperature (∼800 °C) heat treatments is readily explained by the kinetics of As clustering. Physical limitations on the conductivity which can be achieved by thermally annealed As implants in Si are also discussed.