Model for the formation of amorphous Si by ion bombardment

Abstract

The effective annealing of ion implantations in Si is aided by the formation of continuous amorphous layer. The amorphous layer regrows epitaxially at 500 to 600 C and incorporates the dopant in an electrically active, uncompensated form. A phenomenological model is proposed which, with adjustable parameters, accounts for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and with minor additional assumptions, dose rate.