Publication
Radiation Effects
Paper

Model for the formation of amorphous Si by ion bombardment

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Abstract

The effective annealing of ion implantations in Si is aided by the formation of continuous amorphous layer. The amorphous layer regrows epitaxially at 500 to 600 C and incorporates the dopant in an electrically active, uncompensated form. A phenomenological model is proposed which, with adjustable parameters, accounts for the variation of the critical dose required to produce a continuous amorphous layer by ion bombardment with ion, target, temperature, and with minor additional assumptions, dose rate.

Date

13 Sep 2006

Publication

Radiation Effects

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