PaperSolid transport rate in the vapor-solvent growth system ZnS:IF. Jona, G. MandelJournal of Physics and Chemistry of Solids
PaperFormation of amorphous silicon by ion bombardment as a function of ion, temperature, and doseF.F. Morehead, B.L. Crowder, et al.Journal of Applied Physics
PaperEnhanced "tail" diffusion of phosphorus and boron in silicon: Self-interstitial phenomenaF.F. Morehead, R.F. LeverApplied Physics Letters
PaperShallow junctions by high-dose As implants in Si: Experiments and modelingM.Y. Tsai, F.F. Morehead, et al.Journal of Applied Physics
