Guohan Hu, M. G. Gottwald, et al.
IEDM 2017
We report reliable 5 ns switching of spin-transfer torque magneto-resistive random access memory (STT-MRAM) devices for the first time by demonstrating 100% write-error-rate (WER) yield at 1e-6 write-error floor of 256 devices with tight distributions and steep WER slope at a nominal size of 43 nm and a resistance area produce (RA) = 11 . A single device was demonstrated to have less than 1e-10 write-error rate with 5 ns write pulses. We also show promising 3 ns switching performance, with 94% WER yield at 1e-6 write-error floor of 64 devices with nominal size of 50 nm.
Guohan Hu, M. G. Gottwald, et al.
IEDM 2017
M. Tofizur Rahman, Andrew Lyle, et al.
Journal of Applied Physics
Guohan Hu, J.H. Lee, et al.
IEDM 2015
Guohan Hu
INTERMAG 2023